led - chip preliminary 10.04.2007 rev. 07/06 radiation infrared typ. dimensions (m) typ. thickness anode cathode dotted, 25% covered optical and electrical characteristics t amb = 25c, unless otherwise specified parameter test conditions symbol min typ max unit forward voltage i f = 20 ma v f 1.35 1.6 v reverse voltage i r = 100 a v r 5v radiant power 1 i f = 20 ma e 3.5 5.0 mw radiant power 2 i f = 20 ma e 10.0 mw peak wavelength i f = 20 ma p 860 875 890 nm spectral bandwidth at 50% i f = 20 ma ? 0.5 45 nm switching time i f = 20 ma t r , t f 10/20 ns 1 measured on bare chip on to-18 header with epigap equipment 2 measured on epoxy covered chip on to-18 header with epigap equipment labeling type e (typ) [mw] v f (typ) [v] el -880-17 packing: chips on adhesive film with wire-bond side on to p 160 (20) m gold alloy, 1.5 m gold alloy, 0.5 m, quantity lot n type ddh el -880-17 electrodes p (anode) up technology algaas/algaas 360 120 led-14 epigap optoelektronik gmbh, d-12555 berlin, k?penicker str.325 b, haus 201 tel.: +49-30-6576 2543, fax : +49-30-6576 2545 1 of 1
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